鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?/div>
0.4 A, I
B
= 鈭?
mA
I
C
= 鈭?/div>
0.4 A, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?5
鈭?0
鈭?
Typ
0 to 0.1
Max
Unit
V
V
V
鈭?00
130
60
鈭?/div>
0.16
鈭?/div>
0.30
鈭?/div>
0.8
130
22
鈭?.2
350
nA
錚?/div>
錚?/div>
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
R
130 to 220
S
180 to 350
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00063BED
0.4
鹵0.2
5藲
1
2SB0970|2SB970相關(guān)型號PDF文件下載
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